QJD1210011

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Rds On (Max) @ Id, Vgs:25mOhm @ 100A, 20V

• Vgs(th) (Max) @ Id:5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs:500nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds:10200pF @ 800V
• Power - Max:900W
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module