APTMC120HM17CT3AG

Technical Details

• Series:*
• Package:Bulk
• Part Status:Active
• FET Type:4 N-Channel
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:147A (Tc)
• Rds On (Max) @ Id, Vgs:17mOhm @ 100A, 20V

• Vgs(th) (Max) @ Id:4V @ 30mA
• Gate Charge (Qg) (Max) @ Vgs:332nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds:5576pF @ 1000V
• Power - Max:750W
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:SP3