SI4200DY-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):25V
• Current - Continuous Drain (Id) @ 25°C:8A
• Rds On (Max) @ Id, Vgs:25mOhm @ 7.3A, 10V

• Vgs(th) (Max) @ Id:2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:415pF @ 13V
• Power - Max:2.8W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO