HAT2210RWS-E

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:2 N-Channel (Dual), Schottky
• FET Feature:Logic Level Gate, 4.5V Drive
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:7.5A (Ta), 8A (Ta)
• Rds On (Max) @ Id, Vgs:24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:4.6nC @ 4.5V, 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:630pF @ 10V, 1330pF @ 10V
• Power - Max:1.5W (Ta)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SOP