NCV33152DR2G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionBUFFER/INVERTER BASED MOSFET DRI
- CategoryPMIC - Gate Drivers
- Datasheet NCV33152DR2G Datasheet
-
ECAD Model
- Share
In Stock: 16,917
Can ship immediately
Pricing:
- 1$0.7
- 2,500$0.675
- 5,000$0.65
- 12,500$0.625
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:N-Channel MOSFET
- Voltage - Supply:6.1V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.6V
- Current - Peak Output (Source, Sink):1.5A, 1.5A
- Input Type:Non-Inverting
- High Side Voltage - Max (Bootstrap):-
- Rise / Fall Time (Typ):36ns, 32ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
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