MIC4123YME
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionDUAL 3A-PEAK LOW-SIDE MOSFET DRI
- CategoryPMIC - Gate Drivers
- Datasheet MIC4123YME Datasheet
-
ECAD Model
- Share
In Stock: 33,713
Can ship immediately
Pricing:
- 1$1.2
- 25$0.99567
- 100$0.90983
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:N-Channel, P-Channel MOSFET
- Voltage - Supply:4.5V ~ 20V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Inverting
- High Side Voltage - Max (Bootstrap):-
- Rise / Fall Time (Typ):11ns, 11ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package:8-SOIC
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