ISL6610CBZ-T
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionBUFFER/INVERTER BASED MOSFET DRI
- CategoryPMIC - Gate Drivers
- Datasheet ISL6610CBZ-T Datasheet
-
ECAD Model
- Share
In Stock: 121
Can ship immediately
Pricing:
- 1$1.8
- 2,500$1.1475
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:4
- Gate Type:N-Channel MOSFET
- Voltage - Supply:4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):-, 4A
- Input Type:Non-Inverting
- High Side Voltage - Max (Bootstrap):36 V
- Rise / Fall Time (Typ):8ns, 8ns
- Operating Temperature:0°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:14-SOIC
Related Products
BUFFER/INVERTER BASED MOSFET DRI
- 1: $1.80000
BUFFER/INVERTER BASED MOSFET DRI
- 1: $1.80000
DUAL 1.5A MOSFET DRIVER
- 1: $1.89000
DRIVER IC
- 1: $3.30000
IC GATE DRIVER HALF-BRIDGE DSO16
- 1: $3.39000
