MBR60035CTL

GeneSiC Semiconductor
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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Diode Configuration:1 Pair Common Cathode
  • Diode Type:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:600 mV @ 300 A

 

  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 35 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower

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