GB10SLT12-247D

GeneSiC Semiconductor
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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • Diode Configuration:1 Pair Common Cathode
  • Diode Type:Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):12A
  • Voltage - Forward (Vf) (Max) @ If:1.9 V @ 5 A

 

  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:50 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247

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