MMBT6429LT1

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• Transistor Type:NPN
• Current - Collector (Ic) (Max):200 mA
• Voltage - Collector Emitter Breakdown (Max):45 V
• Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max):100nA

• DC Current Gain (hFE) (Min) @ Ic, Vce:500 @ 100µA, 5V
• Power - Max:225 mW
• Frequency - Transition:700MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SOT-23-3 (TO-236)