2N5550/D26Z
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionNPN EPITAXIAL SILICON TRANSISTOR
- CategoryTransistors - Bipolar (BJT) - Single
-
ECAD Model
- Share
In Stock: 24,195
Can ship immediately
Pricing:
- 1$0.02
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):600 mA
- Voltage - Collector Emitter Breakdown (Max):140 V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
- Power - Max:625 mW
- Frequency - Transition:300MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package:TO-92-3
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