2SC2812N6-CPA-TB-E
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionNPN SILICON TRANSISTOR
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet 2SC2812N6-CPA-TB-E Datasheet
-
ECAD Model
- Share
In Stock: 12,139,919
Can ship immediately
Pricing:
- 1$0.04
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- Transistor Type:NPN
- Current - Collector (Ic) (Max):150 mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 6V
- Power - Max:200 mW
- Frequency - Transition:100MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:3-CP
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