2SD1805G-TL-E
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionNPN EPITAXIAL PLANAR SILICON
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet 2SD1805G-TL-E Datasheet
-
ECAD Model
- Share
In Stock: 72,623
Can ship immediately
Pricing:
- 1$0.23
- 2,100$0.23
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):5 A
- Voltage - Collector Emitter Breakdown (Max):20 V
- Vce Saturation (Max) @ Ib, Ic:500mV @ 60mA, 3A
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:280 @ 500mA, 2V
- Power - Max:1 W
- Frequency - Transition:120MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK/TP-FA
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