MJD3055TF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionNPN EPITAXIAL SILICON TRANSISTOR
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet MJD3055TF Datasheet
-
ECAD Model
- Share
In Stock: 43,782
Can ship immediately
Pricing:
- 1$0.28
- 2,000$0.26526
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):10 A
- Voltage - Collector Emitter Breakdown (Max):60 V
- Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
- Current - Collector Cutoff (Max):50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
- Power - Max:1.75 W
- Frequency - Transition:2MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:D-Pak
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