2N6487
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionNPN EPITAXIAL SILICON TRANSISTOR
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet 2N6487 Datasheet
-
ECAD Model
- Share
In Stock: 3,010
Can ship immediately
Pricing:
- 1$0.88
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):15 A
- Voltage - Collector Emitter Breakdown (Max):60 V
- Vce Saturation (Max) @ Ib, Ic:3.5V @ 5A, 15A
- Current - Collector Cutoff (Max):1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5A, 4V
- Power - Max:1.8 W
- Frequency - Transition:5MHz
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Supplier Device Package:TO-220AB
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