2N6667
NTE Electronics, Inc.
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionT-PNP SI-GEN PUR AMP
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet 2N6667 Datasheet
-
ECAD Model
- Share
In Stock: 903
Can ship immediately
Pricing:
- 1$1.56
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Technical Details
- Series:-
- Package:Bag
- Part Status:Active
- Transistor Type:PNP - Darlington
- Current - Collector (Ic) (Max):10 A
- Voltage - Collector Emitter Breakdown (Max):60 V
- Vce Saturation (Max) @ Ib, Ic:3V @ 100mA, 10A
- Current - Collector Cutoff (Max):1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 3V
- Power - Max:2 W
- Frequency - Transition:-
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Supplier Device Package:TO-220AB
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