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Technical Details

  • Series:-
  • Package:Bag
  • Part Status:Active
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1 A
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):100nA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 350mA, 2V
  • Power - Max:850 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-237AA
  • Supplier Device Package:TO-237

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