2SA1955FVBTPL3Z
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PNP 12V 0.4A VESM
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet 2SA1955FVBTPL3Z Datasheet
-
ECAD Model
- Share
In Stock: 10,963
Can ship immediately
Pricing:
- 1$0.12
- 8,000$0.06757
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- Transistor Type:PNP
- Current - Collector (Ic) (Max):400 mA
- Voltage - Collector Emitter Breakdown (Max):12 V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 10mA, 2V
- Power - Max:100 mW
- Frequency - Transition:130MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-723
- Supplier Device Package:VESM
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