MMBT5550LT1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSMALL SIGNAL BIPOLAR TRANSISTOR,
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet MMBT5550LT1G Datasheet
-
ECAD Model
- Share
In Stock: 90,198
Can ship immediately
Pricing:
- 1$0.05
- 3,000$0.00911
- 6,000$0.00824
- 15,000$0.00721
- 30,000$0.00651
- 75,000$0.00582
- 150,000$0.0049
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):600 mA
- Voltage - Collector Emitter Breakdown (Max):140 V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
- Power - Max:225 mW
- Frequency - Transition:-
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:SOT-23-3 (TO-236)
