SNSS20101JT1G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:NPN
• Current - Collector (Ic) (Max):1 A
• Voltage - Collector Emitter Breakdown (Max):20 V
• Vce Saturation (Max) @ Ib, Ic:220mV @ 100mA, 1A
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA, 2V
• Power - Max:225 mW
• Frequency - Transition:350MHz
• Operating Temperature:-
• Mounting Type:Surface Mount
• Package / Case:SC-89, SOT-490
• Supplier Device Package:SC-89-3