NJVMJD350T4G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- Description0.5A, 300V HIGH VOLTAGE PNP BIPO
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet NJVMJD350T4G Datasheet
-
ECAD Model
- Share
In Stock: 12,693
Can ship immediately
Pricing:
- 1$0.24
- 2,500$0.09725
- 5,000$0.09055
- 12,500$0.08943
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:PNP
- Current - Collector (Ic) (Max):500 mA
- Voltage - Collector Emitter Breakdown (Max):300 V
- Vce Saturation (Max) @ Ib, Ic:1V @ 10mA, 100mA
- Current - Collector Cutoff (Max):100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
- Power - Max:1.56 W
- Frequency - Transition:10MHz
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK
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