NJVMJD112T4G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER BIPOLAR TRANSISTOR, 2A, NP
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet NJVMJD112T4G Datasheet
-
ECAD Model
- Share
In Stock: 42,032
Can ship immediately
Pricing:
- 1$0.29
- 2,500$0.29
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN - Darlington
- Current - Collector (Ic) (Max):2 A
- Voltage - Collector Emitter Breakdown (Max):100 V
- Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
- Current - Collector Cutoff (Max):20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
- Power - Max:20 W
- Frequency - Transition:25MHz
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK
