NSV20101JT1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSMALL SIGNAL BIPOLAR TRANSISTOR,
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet NSV20101JT1G Datasheet
-
ECAD Model
- Share
In Stock: 66,103
Can ship immediately
Pricing:
- 1$0.62
- 3,000$0.62
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):1 A
- Voltage - Collector Emitter Breakdown (Max):20 V
- Vce Saturation (Max) @ Ib, Ic:220mV @ 100mA, 1A
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA, 2V
- Power - Max:255 mW
- Frequency - Transition:350MHz
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-89, SOT-490
- Supplier Device Package:SC-89-3
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