2N5550
NTE Electronics, Inc.
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionT-NPN SI- HIV AMP
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet 2N5550 Datasheet
-
ECAD Model
- Share
In Stock: 779
Can ship immediately
Pricing:
- 1$0.1352
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Technical Details
- Series:-
- Package:Bag
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):600 mA
- Voltage - Collector Emitter Breakdown (Max):140 V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
- Power - Max:625 mW
- Frequency - Transition:300MHz
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package:TO-92-3
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