NJVNJD35N04T4G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS NPN DARL 350V 4A DPAK-4
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet NJVNJD35N04T4G Datasheet
-
ECAD Model
- Share
In Stock: 116
Can ship immediately
Pricing:
- 1$0.94
- 2,500$0.33419
- 5,000$0.31114
- 12,500$0.3073
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:NPN - Darlington
- Current - Collector (Ic) (Max):4 A
- Voltage - Collector Emitter Breakdown (Max):350 V
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 20mA, 2A
- Current - Collector Cutoff (Max):50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 2A, 2V
- Power - Max:45 W
- Frequency - Transition:90MHz
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK
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