MJD122-1G

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• Transistor Type:NPN - Darlington
• Current - Collector (Ic) (Max):8 A
• Voltage - Collector Emitter Breakdown (Max):100 V
• Vce Saturation (Max) @ Ib, Ic:4V @ 80mA, 8A
• Current - Collector Cutoff (Max):10µA

• DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
• Power - Max:1.75 W
• Frequency - Transition:4MHz
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:DPAK