ZTX855STZ

Technical Details

• Series:-
• Package:Tape & Box (TB)
• Part Status:Active
• Transistor Type:NPN
• Current - Collector (Ic) (Max):4 A
• Voltage - Collector Emitter Breakdown (Max):150 V
• Vce Saturation (Max) @ Ib, Ic:260mV @ 400mA, 4A
• Current - Collector Cutoff (Max):50nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 5V
• Power - Max:1.2 W
• Frequency - Transition:90MHz
• Operating Temperature:-55°C ~ 200°C (TJ)
• Mounting Type:Through Hole
• Package / Case:E-Line-3
• Supplier Device Package:E-Line (TO-92 compatible)