2N3636UB

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:PNP
• Current - Collector (Ic) (Max):1 A
• Voltage - Collector Emitter Breakdown (Max):175 V
• Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max):10µA

• DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 50mA, 10V
• Power - Max:1.5 W
• Frequency - Transition:-
• Operating Temperature:-65°C ~ 200°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:3-SMD, No Lead
• Supplier Device Package:3-SMD