2N5210TAR

ON Semiconductor
In Stock: 127

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Technical Details

  • Series:-
  • Package:Tape & Box (TB)
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):50nA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100µA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:30MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package:TO-92-3

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