MJD117-001

ON Semiconductor
In Stock: 111

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):2 A
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
  • Current - Collector Cutoff (Max):20µA

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
  • Power - Max:1.75 W
  • Frequency - Transition:25MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package:I-PAK

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