MMJT350T1

ON Semiconductor
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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):100nA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
  • Power - Max:2.75 W
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223

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