FJP5200RTU

ON Semiconductor
In Stock: 107

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):17 A
  • Voltage - Collector Emitter Breakdown (Max):250 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 800mA, 8A
  • Current - Collector Cutoff (Max):5µA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:55 @ 1A, 5V
  • Power - Max:80 W
  • Frequency - Transition:30MHz
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

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