BC637_J35Z

ON Semiconductor
In Stock: 167

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1 A
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package:TO-92-3

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