2SB817C-1E

ON Semiconductor
In Stock: 120

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):12 A
  • Voltage - Collector Emitter Breakdown (Max):140 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 500mA, 5A
  • Current - Collector Cutoff (Max):100µA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 5V
  • Power - Max:120 W
  • Frequency - Transition:10MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P-3L

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