2SB1457(TE6,F,M)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PNP 2A 100V TO226-3
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet 2SB1457(TE6,F,M) Datasheet
-
ECAD Model
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In Stock: 187
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- Transistor Type:PNP
- Current - Collector (Ic) (Max):2 A
- Voltage - Collector Emitter Breakdown (Max):100 V
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max):10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 1A, 2V
- Power - Max:900 mW
- Frequency - Transition:50MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 Long Body
- Supplier Device Package:TO-92MOD
