PN100_G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• Transistor Type:NPN
• Current - Collector (Ic) (Max):500 mA
• Voltage - Collector Emitter Breakdown (Max):45 V
• Vce Saturation (Max) @ Ib, Ic:400mV @ 20mA, 200mA
• Current - Collector Cutoff (Max):50nA

• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 5V
• Power - Max:625 mW
• Frequency - Transition:250MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package:TO-92-3