2SD2012-BP

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• Transistor Type:NPN
• Current - Collector (Ic) (Max):3 A
• Voltage - Collector Emitter Breakdown (Max):60 V
• Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 2A
• Current - Collector Cutoff (Max):100µA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 5V
• Power - Max:2 W
• Frequency - Transition:3MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-220-3
• Supplier Device Package:TO-220