2N6517-AP

Technical Details

• Series:-
• Package:Tape & Box (TB)
• Part Status:Obsolete
• Transistor Type:NPN
• Current - Collector (Ic) (Max):500 mA
• Voltage - Collector Emitter Breakdown (Max):350 V
• Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
• Current - Collector Cutoff (Max):50nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 30mA, 10V
• Power - Max:625 mW
• Frequency - Transition:200MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Supplier Device Package:TO-92