2SD667L-D-AP

Technical Details

• Series:-
• Package:Tape & Box (TB)
• Part Status:Obsolete
• Transistor Type:NPN
• Current - Collector (Ic) (Max):1 A
• Voltage - Collector Emitter Breakdown (Max):80 V
• Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
• Current - Collector Cutoff (Max):10µA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 150mA, 5V
• Power - Max:900 mW
• Frequency - Transition:140MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
• Supplier Device Package:TO-92L