CP307-2N5308-CT

Central Semiconductor
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Technical Details

  • Series:-
  • Package:Tray
  • Part Status:Obsolete
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max):100nA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:60MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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