PBSS5350S,126

NXP Semiconductors
In Stock: 132

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Technical Details

  • Series:-
  • Package:Tape & Box (TB)
  • Part Status:Obsolete
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3 A
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):100nA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 2A, 2V
  • Power - Max:830 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package:TO-92-3

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