EPC2019
EPC
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET N-CH 200V 8.5A DIE
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet EPC2019 Datasheet
-
ECAD Model
- Share
In Stock: 56,955
Can ship immediately
Pricing:
- 1$3.67
- 1,000$1.82878
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Technical Details
- Series:eGaN®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):5V
- Rds On (Max) @ Id, Vgs:50mOhm @ 7A, 5V
- Vgs(th) (Max) @ Id:2.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 5 V
- Vgs (Max):+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:Die
- Package / Case:Die
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