SCT3080ALGC11
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 650V 30A TO247N
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SCT3080ALGC11 Datasheet
-
ECAD Model
- Share
In Stock: 1,879
Can ship immediately
Pricing:
- 1$10.86
- 10$9.80807
- 25$9.35147
- 100$8.11972
- 450$7.75479
- 900$7.07054
- 1,350$6.3863
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):18V
- Rds On (Max) @ Id, Vgs:104mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id:5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs:48 nC @ 18 V
- Vgs (Max):+22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds:571 pF @ 500 V
- FET Feature:-
- Power Dissipation (Max):134W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247N
- Package / Case:TO-247-3
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