SSM3J56MFV,L3F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 800MA VESM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM3J56MFV,L3F Datasheet
-
ECAD Model
- Share
In Stock: 191,875
Can ship immediately
Pricing:
- 1$0.47
- 8,000$0.07357
- 16,000$0.06539
- 24,000$0.0613
- 56,000$0.05722
Quote It
Technical Details
- Series:U-MOSVI
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:390mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):150mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:VESM
- Package / Case:SOT-723
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