SSM3J356R,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 60V 2A SOT-23F
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM3J356R,LF Datasheet
-
ECAD Model
- Share
In Stock: 72,376
Can ship immediately
Pricing:
- 1$0.43
- 3,000$0.09064
- 6,000$0.0856
- 15,000$0.07805
- 30,000$0.07301
- 75,000$0.07049
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Technical Details
- Series:U-MOSVI
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:300mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 10 V
- Vgs (Max):+10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1W (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23F
- Package / Case:SOT-23-3 Flat Leads
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