SI2312BDS-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 3.9A SOT23-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI2312BDS-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 23,353
Can ship immediately
Pricing:
- 1$0.52
- 3,000$0.20399
- 6,000$0.19156
- 15,000$0.17912
- 30,000$0.17042
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:31mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):750mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23-3 (TO-236)
- Package / Case:TO-236-3, SC-59, SOT-23-3
