SQ2337ES-T1_GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 80V 2.2A SOT23-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SQ2337ES-T1_GE3 Datasheet
-
ECAD Model
- Share
In Stock: 6,550
Can ship immediately
Pricing:
- 1$0.69
- 3,000$0.26768
- 6,000$0.25137
- 15,000$0.23505
- 30,000$0.22363
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Technical Details
- Series:Automotive, AEC-Q101, TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):80 V
- Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:290mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):3W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23-3 (TO-236)
- Package / Case:TO-236-3, SC-59, SOT-23-3
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