BSC110N06NS3GATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 50A TDSON-8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSC110N06NS3GATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 77,331
Can ship immediately
Pricing:
- 1$1.04
- 5,000$0.40159
- 10,000$0.38649
- 25,000$0.3843
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:11mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:4V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 50W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TDSON-8-5
- Package / Case:8-PowerTDFN
Related Products
MOSFET N-CH 100V 15A 8VSON
- 1: $0.68000
- 250: $0.46735
- 500: $0.39920
MOSFET N-CH 60V 72A 8TSON
- 1: $1.05000
