BSP149H6327XTSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 660MA SOT223-4
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSP149H6327XTSA1 Datasheet
-
ECAD Model
- Share
In Stock: 18,066
Can ship immediately
Pricing:
- 1$1.24
- 1,000$0.65439
- 2,000$0.61526
- 5,000$0.58787
- 10,000$0.56832
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Technical Details
- Series:SIPMOS®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):0V, 10V
- Rds On (Max) @ Id, Vgs:1.8Ohm @ 660mA, 10V
- Vgs(th) (Max) @ Id:1V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs:14 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
- FET Feature:Depletion Mode
- Power Dissipation (Max):1.8W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-SOT223-4
- Package / Case:TO-261-4, TO-261AA
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