BSZ900N20NS3GATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 15.2A 8TSDSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSZ900N20NS3GATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 22,813
Can ship immediately
Pricing:
- 1$1.78
- 5,000$0.78578
- 10,000$0.7693
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:15.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:90mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id:4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs:11.6 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):62.5W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TSDSON-8
- Package / Case:8-PowerTDFN
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